Resistive Switching by Percolative Conducting Filaments in Organometal Perovskite Unipolar Memory Devices Analyzed Using Current Noise Spectra-Reference-Cited by-同舟云学术

Resistive Switching by Percolative Conducting Filaments in Organometal Perovskite Unipolar Memory Devices Analyzed Using Current Noise Spectra

Published:2021-09-23 Issue:4 Volume:32 Page:2107727
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv Funct Materials

Author:

Ahn Heebeom¹,Kang Keehoon²,Song Younggul¹,Lee Woocheol¹,Kim Jae‐Keun¹,Kim Junwoo¹,Lee Jonghoon¹,Baek Kyeong‐Yoon¹,Shin Jiwon¹,Lim Hyungbin¹,Kim Yongjin²,Lee Jae Sung³,Lee Takhee¹^ORCID

Affiliation:

1. Department of Physics and Astronomy and Institute of Applied Physics Seoul National University Seoul 08826 Korea

2. Department of Materials Science and Engineering Yonsei University Seoul 03722 Korea

3. School of Physics Korea Institute for Advanced Study (KIAS) Seoul 02455 Korea

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202107727

Reference72 articles.

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5. Metal-halide perovskites for photovoltaic and light-emitting devices

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