The influence of thermal cycling on the activation energy of conduction electrons and filament temperature in Pt/NiOx/Pt ReRAMs
Author:
Affiliation:
1. Department of Physics, University of Alberta 1 , Edmonton, Alberta T6G 2E1, Canada
2. Department of Physics, American University of Sharjah 2 , Sharjah, United Arab Emirates
Abstract
Funder
Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0151967/18007795/253501_1_5.0151967.pdf
Reference24 articles.
1. Ultra-high ON/OFF ratio and multi-storage on NiO resistive switching device
2. Investigation of resistive switching and transport mechanisms of Al2O3/TiO2−x memristors under cryogenic conditions (1.5 K)
3. Metallic to hopping conduction transition in Ta2O5−x/TaOy resistive switching device
4. Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices
5. Temperature-dependent time relaxation of ON and OFF states in NiO$$_{x}$$-based crossbar memory arrays
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Analog programming of CMOS-compatible Al2O3/TiO2−x memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming;Applied Physics Letters;2023-10-16
2. Low-temperature enhanced OFF-state telegraph noise in defect engineered ReRAMs;APL Materials;2023-10-01
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