In‐Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO <sub>3</sub> Interfaces-Reference-Cited by-同舟云学术

In‐Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO ₃ Interfaces

Published:2022-09-30 Issue:49 Volume:32 Page:2207418
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv Funct Materials

Author:

Sun Jie¹^ORCID,Li Yiming¹,Ou Yangjun¹,Huang Qianwei²,Liao Xiaozhou²,Chen Zibin³,Chai Xiaojie⁴,Zhuang Xiao¹,Zhang Wendi¹,Wang Chao¹,Jiang Jun¹,Jiang Anquan¹^ORCID

Affiliation:

1. State Key Laboratory of ASIC & System School of Microelectronics Fudan University Shanghai 200433 China

2. School of Aerospace Mechanical and Mechatronic Engineering The University of Sydney Sydney NSW 2006 Australia

3. Department of Industrial and Systems Engineering The Hong Kong Polytechnic University Hong Kong China

4. Shanxi Key Laboratory of Micro Nano Sensors & Artificial Intelligence Perception College of Information and Computer Taiyuan University of Technology Taiyuan 030024 China

Funder

National Natural Science Foundation of China

Australian Research Council

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202207418

Reference46 articles.

1. Domain Wall Conductivity in La-DopedBiFeO3

2. Electrical half-wave rectification at ferroelectric domain walls