Layered (C 6 H 5 CH 2 NH 3 ) 2 CuBr 4 Perovskite for Multilevel Storage Resistive Switching Memory-Reference-Cited by-同舟云学术

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Layered (C 6 H 5 CH 2 NH 3 ) 2 CuBr 4 Perovskite for Multilevel Storage Resistive Switching Memory

Published:2020-05-14 Issue:27 Volume:30 Page:2002653
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Kim So‐Yeon¹,Yang June‐Mo¹,Choi Eun‐Suk¹,Park Nam‐Gyu¹^ORCID

Affiliation:

1. School of Chemical EngineeringSungkyunkwan University Suwon 16419 Korea

Funder

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202002653

Reference51 articles.

1. Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching

2. Air-Stable Cesium Lead Iodide Perovskite for Ultra-Low Operating Voltage Resistive Switching

3. Enhanced Endurance Organolead Halide Perovskite Resistive Switching Memories Operable under an Extremely Low Bending Radius

4. Effect of interlayer spacing in layered perovskites on resistive switching memory

5. The effect of compositional engineering of imidazolium lead iodide on the resistive switching properties

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