Effect of interlayer spacing in layered perovskites on resistive switching memory
Author:
Affiliation:
1. School of Chemical Engineering
2. Sungkyunkwan University
3. Suwon 16419
4. Korea
Abstract
We report here the effect of interlayer spacing in 2-dimensional (2D) perovskites of [C6H5(CH2)nNH3]2PbI4 (anilinium (An) for n = 0, benzylammonium (BzA) for n = 1 and phenylethylammonium (PEA) for n = 2) on resistive switching properties.
Funder
National Research Foundation of Korea
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2019/NR/C9NR00438F
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