Machine Vision Based on an Ultra‐Wide Bandgap 2D Semiconductor AsSbO3

Abstract

AbstractFacing the future development trend of miniaturization and intelligence of electronic devices, solar‐blind photodetectors based on ultrawide‐bandgap 2D semiconductors have the advantages of low dark current, and high signal‐to‐noise ratio, as well as the features of micro‐nanometer miniaturization and multi‐functionalization of 2D material devices, which have potential applications in the photoelectric sensor part of high‐performance machine vision systems. This study reports a 2D oxide semiconductor, AsSbO3, with an ultrawide bandgap (4.997 eV for monolayer and 4.4 eV for multilayer) to be used to fabricate highly selective solar‐blind UV photodetectors, of which the dark current as low as 100 fA and rejection ratio of UV‐C and UV‐A reaches 7.6 × 103. Under 239 nm incident light, the responsivity is 105 mA W−1 and the detectivity is 7.58 × 1012 Jones. Owing to the remarkable anisotropic crystal structure, AsSbO3 also shows significant linear dichroism and nonlinear optical properties. Finally, a simple machine vision system is simulated by combining the real‐time imaging function in solar‐blind UV with a convolutional neural network. This study enriches the material system of ultrawide‐bandgap 2D semiconductors and provides insight into the future development of high‐performance solar‐blind UV optoelectronic devices.