Affiliation:
1. Guangdong Provincial Key Laboratory of Chip and Integration Technology School of Semiconductor Science and Technology Faculty of Engineering South China Normal University Foshan 528225 P. R. China
2. College of Materials and Energy Guangdong University of Technology Guangzhou 510006 P. R. China
3. School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P. R. China
4. College of Optical Science and Engineering Zhejiang University Hangzhou 310027 P. R. China
Abstract
AbstractGermanium‐based monochalcogenides (i.e., GeS and GeSe) with desirable properties are promising candidates for the development of next‐generation optoelectronic devices. However, they are still stuck with challenges, such as relatively fixed electronic band structure, unconfigurable optoelectronic characteristics, and difficulty in achieving free‐standing growth. Herein, it is demonstrated that two‐dimensional (2D) free‐standing GeS1−xSex (0 ≤ x ≤ 1) nanoplates can be grown by low‐pressure rapid physical vapor deposition (LPRPVD), fulfilling a continuously composition‐tunable optical bandgap and electronic band structure. By leveraging the synergistic effect of composition‐dependent modulation and free‐standing growth, GeS1−xSex‐based optoelectronic devices exhibit significantly configurable hole mobility from 6.22 × 10−4 to 1.24 cm2V−1s⁻1 and tunable responsivity from 8.6 to 311 A W−1 (635 nm), as x varies from 0 to 1. Furthermore, the polarimetric sensitivity can be tailored from 4.3 (GeS0.29Se0.71) to 1.8 (GeSe) benefiting from alloy engineering. Finally, the tailored imaging capability is also demonstrated to show the application potential of GeS1−xSex alloy nanoplates. This work broadens the functionality of conventional binary materials and motivates the development of tailored polarimetric optoelectronic devices.
Funder
National Natural Science Foundation of China