Edge‐Assisted Epitaxy of 2D TaSe <sub>2</sub> ‐MoSe <sub>2</sub> Metal–Semiconductor Heterostructures and Application to Schottky Diodes-Reference-Cited by-同舟云学术

Edge‐Assisted Epitaxy of 2D TaSe ₂ ‐MoSe ₂ Metal–Semiconductor Heterostructures and Application to Schottky Diodes

Published:2022-04-30 Issue:30 Volume:32 Page:2201449
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv Funct Materials

Author:

Qiao Peiyu¹²,Xia Jing¹²,Li Xuanze¹²,Ru Fan¹²,Liu Pei¹²,Tian Lifeng¹²,Jiang Xingxing³,Lin Zheshuai³,Chen Xue⁴,Meng Xiang‐Min¹²^ORCID

Affiliation:

1. Key Laboratory of Photochemical Conversion and Optoelectronic Materials Technical Institute of Physics and Chemistry Chinese Academy of Sciences Beijing 100190 China

2. Centre of Material Science and Optoelectronic Engineering University of Chinese Academy of Science Beijing 10049 P. R. China

3. Key Laboratory of Functional Crystals and Laser Technology Technical Institute of Physics and Chemistry Chinese Academy of Sciences Beijing 100190 China

4. Engineering Research Center for Semiconductor Integrated Technology Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202201449

Reference58 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides