A novel nonlinear large-signal statistical model of GaN HEMT used in S-band power amplifier design and yield estimation-Reference-Cited by-同舟云学术

A novel nonlinear large-signal statistical model of GaN HEMT used in S-band power amplifier design and yield estimation

Published:2016-03-22 Issue:1 Volume:30 Page:e2165
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Chen Zhikai¹,Xu Yuehang¹,Wang Changsi¹,Wen Zhang¹,Rong Chuicai¹,Xu Ruimin¹

Affiliation:

1. EHF Key Laboratory of Fundamental Science, School of Electronic Engineering; University of Electronic Science and Technology of China; Chengdu 611731 China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jnm.2165/fullpdf

Reference12 articles.

1. High-efficiency and high-power microwave amplifier using GaN-on-Si FET with improved high-temperature operation characteristics;Takenaka;IEEE Trans Microwave Theory Tech,2014

2. A linear statistical FET model using principal component analysis;Purvjance;IEEE Trans Microwave Theory Tech,1989

3. Accurate design centering and yield prediction using the “truth model”;Meehan;IEEE MTT-S Int Microwave Symp Digest,1991

4. FET statistical modeling using parameter orthogonalization;Carrol;IEEE Trans Microwave Theory Tech,1996

5. Nonlinear statistical modeling and yield estimation technique for use in Monte Carlo simulations;Swidzinski;IEEE Trans Microwave Theory Tech,2000

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1. Compact small‐signal equivalent circuit statistical analysis model of microwave wide bandgap gallium nitride high electron mobility transistors;International Journal of RF and Microwave Computer-Aided Engineering;2022-10-13

2. Guest editorial for the special issue on linear and nonlinear modeling of GaN transistors and circuits;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2016-09-07

3. A novel nonlinear large-signal statistical model of GaN HEMT used in S-band power amplifier design and yield estimation;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2016-03-22