Compact small‐signal equivalent circuit statistical analysis model of microwave wide bandgap gallium nitride high electron mobility transistors
Author:
Affiliation:
1. School of Mechano‐Electronic Engineering Xidian University Xi'an China
2. The 41st Research Institute of China Electronics Science and Technology Group Qingdao China
Funder
Natural Science Foundation of Shaanxi Province
Publisher
Hindawi Limited
Subject
Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Computer Science Applications
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/mmce.23468
Reference20 articles.
1. WenZ MaoS WuY et al.A quasi‐physical large‐signal statistical model for 0.15 μm AlGaN/GaN HEMTs process. Paper presented at: IEEE MTT‐S International Microwave Symposium (IMS) Boston MA; 2019:208‐211.
2. Dependence of Electrical Characteristics on Epitaxial Layer Structure of AlGaN/GaN HEMTs Fabricated on Freestanding GaN Substrates
3. ChhabriaN JaiprakashA MotwaniKR et al.RLC circuit simulation and Monte Carlo analysis in MATLAB. Paper presented at: International Conference on Communication and Electronics Systems (ICCES) Coimbatore India; 2016:1‐6.
4. JamrozBF WilliamsDF RezacJD et al.Accurate Monte Carlo uncertainty analysis for multiple measurements of microwave systems. Paper presented at: IEEE MTT‐S International Microwave Symposium (IMS) Boston MA; 2019:1279‐1282.
5. VasalloBG TalboV GonzálezT et al.Monte Carlo analysis of III–V PIN diodes for tunnel‐FETs and impact ionization‐MOSFETs. Paper presented at: Spanish Conference on Electron Devices (CDE) Barcelona Spain; 2017:1‐4.
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