Thermal behavior analysis of GaN based epi-material on different substrates by means of a physical-thermal model-Reference-Cited by-同舟云学术

Thermal behavior analysis of GaN based epi-material on different substrates by means of a physical-thermal model

Published:2010-06-07 Issue:8 Volume:207 Page:1820-1826
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Tang Xiao,Rousseau Michel,Defrance Nicolas,Hoel Virginie,Soltani Ali,Langer Robert,De Jaeger Jean-Claude

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.200925321/fullpdf

Reference20 articles.

1. First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate

2. AlGaN∕GaN high electron mobility transistors on Si∕SiO[sub 2]/poly-SiC substrates

3. 30-W/mm GaN HEMTs by Field Plate Optimization

4. Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate

5. R. Langer B. Faure A. Boussagol P. Bove A. Wilk J. Thuret F. Letertre CS MANTECH Conference, Vancouver, British Columbia, Canada 2006

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