AlGaN∕GaN high electron mobility transistors on Si∕SiO[sub 2]/poly-SiC substrates-Reference-Cited by-同舟云学术

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AlGaN∕GaN high electron mobility transistors on Si∕SiO[sub 2]/poly-SiC substrates

Published:2006 Issue:5 Volume:24 Page:2302
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Anderson T. J.,Ren F.,Voss L.,Hlad M.,Gila B. P.,Covert L.,Lin J.,Pearton S. J.,Bove P.,Lahreche H.,Thuret J.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Neutron irradiation on AlGaN/GaN high electron mobility transistors on SiC substrates;Journal of Crystal Growth;2011-07

2. Thermal behavior analysis of GaN based epi-material on different substrates by means of a physical-thermal model;physica status solidi (a);2010-06-07

3. Cu-plated through-wafer vias for AlGaN∕GaN high electron mobility transistors on Si;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

4. Spectroscopic ellipsometry studies of GaN films deposited by reactive rf sputtering of GaAs target;Journal of Applied Physics;2008-04-15

5. Comparative study on stress in AlGaN/GaN HEMT structures grown on 6H-SiC, Si and on composite substrates of the 6H-SiC/poly-SiC and Si/poly-SiC;Journal of Physics: Conference Series;2008-03-01

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