Interface properties of an AlN/(AlN) x (SiC)1-x /4H-SiC heterostructure-Reference-Cited by-同舟云学术

Interface properties of an AlN/(AlN) x (SiC)1-x /4H-SiC heterostructure

Published:2006-09-07 Issue:15 Volume:203 Page:3720-3725
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Edgar J. H.,Gu Z.,Gu L.,Smith David J.

Funder

National Science Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.200622279/fullpdf

Reference26 articles.

1. Sublimation growth and characterization of bulk aluminum nitride single crystals

2. Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich technique

3. Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates

4. Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates

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