Growth of manganese silicide layers on Si substrates using MnCl2source-Reference-Cited by-同舟云学术

Growth of manganese silicide layers on Si substrates using MnCl2source

Published:2009-02 Issue:2 Volume:206 Page:233-237
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Junhua Hu,Kurokawa Takanori,Suemasu Takashi,Takahara Shogo,Itakura Masaru,Tatsuoka Hirokazu

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Asia-Pacific Conference on Semiconducting Silicides Science and Technology Towards Sustainable Optoelectronics;Maeda;Thin Solid Films,2007

2. The potential of higher manganese silicide as an optoelectronic thin film material

3. T. S. Kamilov, A. A. Uzokov, D. K. Kabilov, S. V. Ordin, V. V. Klechkovskaya, I. S. Zanaveskina, R. A. Muminov, and B. N. Zaveryukhin, in: Proceedings 22nd International Conference on Thermoelectrics, Herault, France, 2003 (IEEE, Piscataway, 2004), pp. 384-387.

4. Preparation of manganese silicide thin films by solid phase reaction

5. Surfactant mediated growth of MnSi1.7 on Si(001)

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