Windowed growth of AlGaN/GaN heterostructures on Silicon 〈111〉 substrates for future MOS integration-Reference-Cited by-同舟云学术

Windowed growth of AlGaN/GaN heterostructures on Silicon 〈111〉 substrates for future MOS integration

Published:2009-02 Issue:2 Volume:206 Page:371-374
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Chyurlia P.,Semond F.,Lester T.,Bardwell J. A.,Rolfe S.,Cordier Y.,Baron N.,Moreno J.-C.,Tarr N. G.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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5. Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

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