Optical and crystal properties of ammonia MBE-grown GaN layers on plasma-assisted MBE-grown AlN/Si (110) substrates
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
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1. Polarity-controlled AlN/Si templates by in situ oxide desorption for variably arrayed MOVPE-GaN nanowires;Journal of Crystal Growth;2021-07
2. GaN-based light-emitting diodes on various substrates: a critical review;Reports on Progress in Physics;2016-04-08
3. Influence of an embedded low-temperature AlN strain relaxation layer on the strain states and the buffer characteristics of GaN films grown on (110) Si substrates by using ammonia molecular beam epitaxy;Journal of the Korean Physical Society;2015-06
4. Microstructural properties of GaN grown on a Si(110) substrate by gas-source molecular beam epitaxy: Dependence on the ammonia flux;Current Applied Physics;2015-03
5. Microstructural characteristics of AlN thin layers grown on Si(110) substrates by molecular beam epitaxy: Transmission electron microscopy study;Thin Solid Films;2015-02
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