Growth of GaN based structures on Si(110) by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Growth of GaN based structures on Si(110) by molecular beam epitaxy

Published:2010-09 Issue:19 Volume:312 Page:2683-2688
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Cordier Y.,Moreno J.-C.,Baron N.,Frayssinet E.,Chauveau J.-M.,Nemoz M.,Chenot S.,Damilano B.,Semond F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. AlGaN∕GaN HEMTs on Si(111) with 6.6 W∕mm output power density

2. AlGaN∕GaN HEMTs on Si substrate with 7 W∕mm output power density at 10 GHz

3. 12 W/mm AlGaN–GaN HFETs on Silicon Substrates

4. High performance of InGaN LEDs on (111) silicon substrates grown by MOCVD

5. Growth of III-nitride photonic structures on large area silicon substrates

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture;International Journal of Molecular Sciences;2022-12-19

2. CVD Elaboration of 3C-SiC on AlN/Si Heterostructures: Structural Trends and Evolution during Growth;Crystals;2022-11-10

3. Terahertz intersubband absorption of GaN/AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates;Applied Physics Letters;2019-12-23

4. Impact of strain state on the ultrathin AlN/GaN superlattice growth on Si(110) substrates by metalorganic chemical vapor deposition;Japanese Journal of Applied Physics;2017-12-14

5. Anisotropic strain relaxation and high quality AlGaN/GaN heterostructures on Si (110) substrates;Applied Physics Letters;2017-05-08

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