Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

Published:2008-11 Issue:11 Volume:29 Page:1187-1189
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Cordier Yvon,Moreno Jean-Christophe,Baron Nicolas,Frayssinet Eric,Chenot SÉbastien,Damilano Benjamin,Semond Fabrice

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/4655490/04655509.pdf?arnumber=4655509

Cited by 45 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A systematic study on the efficacy of low-temperature GaN regrown on p-GaN to suppress Mg out-diffusion;Frontiers in Materials;2023-12-05

2. Alloy distribution and compositional metrology of epitaxial ScAlN by atom probe tomography;Applied Physics Letters;2023-10-16

3. Prospects of III–V Semiconductor-Based High Electron Mobility Transistors (HEMTs) Towards Emerging Applications;Lecture Notes in Electrical Engineering;2023-09-03

4. Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN;APL Materials;2023-03-01

5. Characterization of Al X Ga 1− X N/GaN High Electron Mobility Transistor Structures with Mercury Probe Capacitance–Voltage and Current–Voltage;physica status solidi (a);2022-01-29

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP