The progress of AlN bulk growth and epitaxy for electronic applications-Reference-Cited by-同舟云学术

The progress of AlN bulk growth and epitaxy for electronic applications

Published:2009-06 Issue:6 Volume:206 Page:1153-1159
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi (a)

Author:

Mueller Stephan G.,Bondokov Robert T.,Morgan Kenneth E.,Slack Glen A.,Schujman Sandra B.,Grandusky James,Smart Joseph A.,Schowalter Leo J.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. Nitride emitters go nonpolar

3. Growth of high purity AlN crystals

4. Ain single crystals

5. Experimental and theoretical analysis of sublimation growth of AlN bulk crystals

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