Effects of rapid thermal processing on oxide precipitation in conventional and nitrogen-doped Czochralski silicon-Reference-Cited by-同舟云学术

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Effects of rapid thermal processing on oxide precipitation in conventional and nitrogen-doped Czochralski silicon

Published:2006-03 Issue:4 Volume:203 Page:670-676
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Ma Xiangyang,Fu Liming,Tian Daxi,Cui Can,Yang Deren

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. F. Shimura, in: Oxygen in Silicon, Semiconductors and Semimetals, Vol. 42, edited by F. Shimura (Academic, San Diego, 1994), p. 1.

2. F. Shimura, in: Oxygen in Silicon, Semiconductors and Semimetals, Vol. 42, edited by F. Shimura (Academic, San Diego, 1994), p. 577.

3. K. Sumino and I. Yonenaga, in: Oxygen in Silicon, Semiconductors and Semimetals, Vol. 42, edited by F. Shimura (Academic, San Diego, 1994), p. 449.

4. Grown-in defects in nitrogen-doped Czochralski silicon

5. Formation of pnp bipolar structure by thermal donors in nitrogen-containing p-type Czochralski silicon wafers

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