Electrical characteristics of temperature-difference liquid phase deposited SiO2on GaN with (NH4)2Sxtreatment-Reference-Cited by-同舟云学术

Electrical characteristics of temperature-difference liquid phase deposited SiO2on GaN with (NH4)2Sxtreatment

Published:2008-11 Issue:11 Volume:205 Page:2679-2682
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Lee Ming-Kwei,Ho Chen-Lin,Zeng Jia-Yi

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Enhancement of InGaN–GaN Indium–Tin–Oxide Flip-Chip Light-Emitting Diodes With TiO$_2$–SiO$_2$Multilayer Stack Omnidirectional Reflector

2. Effects of tensile stress induced by SiO2 passivation layer on the properties of AlGaN∕GaN heterostructure photodiode

3. Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride

4. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

5. Structural and Electrical Characterizations of PbTiO[sub 3] Thin Films Grown on LaNiO[sub 3]-Buffered Pt∕Ti∕SiO[sub 2]∕Si Substrates by Liquid Phase Deposition

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1. Novel Oxide-Passivated AlGaN/GaN HEMT by Using Hydrogen Peroxide Treatment;IEEE Transactions on Electron Devices;2011-12

2. Electrical Characteristics of $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{TiO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Nanolaminate MOS Capacitor on $p$-GaN With Post Metallization Annealing and $(\hbox{NH}_{4})_{2}\hbox{S}_{X}$ Treatments;IEEE Electron Device Letters;2009-09

3. Electrochromic Characterization of Nickel Oxide Films Grown on ITO/Glass by Liquid Phase Deposition;Journal of The Electrochemical Society;2009