Pressure-induced transformations of nitrogen implanted into silicon-Reference-Cited by-同舟云学术

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Pressure-induced transformations of nitrogen implanted into silicon

Published:2006-03 Issue:4 Volume:203 Page:781-785
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Akhmetov V. D.,Misiuk A.,Barcz A.,Richter H.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Distribution and properties of oxide precipitates in annealed nitrogen doped 300 mm Si wafers

2. First-principles investigations of nitrogen-doping effects on defect aggregation processes in Czochralski Si

3. V. D. Akhmetov, O. Lysytskiy, and H. Richter, in: High Purity Silicon VIII, Electrochem. Soc. Ser. PV 2004-05 (The Electrochemical Society, Pennington, NJ, 2004), p. 109.

4. Synthesis of silicon oxynitride layers by dual ion-implantation and their annealing behaviour

5. Annealing Behavior of Interstitial Nitrogen Pair in Czochralski Silicon Observed by Infrared Absorption Method

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radially non-uniform interaction of nitrogen with silicon wafers;Journal of Materials Science: Materials in Electronics;2008-03-04

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