Synthesis of silicon oxynitride layers by dual ion-implantation and their annealing behaviour
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference19 articles.
1. Peculiarities of buried silicon oxynitride layer synthesis by sequential oxygen and nitrogen ion implantation in silicon
2. The anomalous depth distribution of low dose oxygen and nitrogen ions implanted into silicon
3. Behaviour of implanted oxygen and nitrogen in halogen lamp annealed silicon
4. Polyenergy ion beam synthesis of buried oxynitride layer in silicon
5. On the formation of silicon oxynitride by ion implantation in fused silica
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1. Gas barrier properties of SiON films deposited by plasma enhanced chemical vapor deposition at low temperature as a function of the plasma process parameters;Surface and Coatings Technology;2013-08
2. Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide;Chinese Physics B;2012-11
3. Study of structure and surface modification of silicon-on-insulator (SOI) devices synthesized by dual ion implantation;Surface and Coatings Technology;2009-06
4. Structural studies of silicon oxynitride layers formed by low energy ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04
5. Specific features of steady-state implantation of crystalline silicon with a molecular oxygen-nitrogen beam: Si L 2, 3 x-ray emission spectra;Physics of the Solid State;2008-01
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