Polyenergy ion beam synthesis of buried oxynitride layer in silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference14 articles.
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2. J.L. Leray, in: R. Devine (Ed.), Amorphous Insulating Thin Films, Elsevier, Amsterdam, 1995, p. 10
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4. Behavior of oxygen and nitrogen upon simultaneous substoichiometric implantation into silicon
5. A phenomenological theory of ion‐beam synthesis of ternary compound in silicon
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1. Ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure;Semiconductors;2014-08-31
2. Study of structure and surface modification of silicon-on-insulator (SOI) devices synthesized by dual ion implantation;Surface and Coatings Technology;2009-06
3. Structural studies of silicon oxynitride layers formed by low energy ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04
4. Specific features of steady-state implantation of crystalline silicon with a molecular oxygen-nitrogen beam: Si L 2, 3 x-ray emission spectra;Physics of the Solid State;2008-01
5. Synthesis of buried silicon oxynitride layers by ion implantation for silicon-on-insulator (SOI) structures;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-04
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