Photoreflectance spectroscopy for the qualification of GaAsSb alloys introduced in ultrafast heterojunction bipolar transistors on InP-Reference-Cited by-同舟云学术

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Photoreflectance spectroscopy for the qualification of GaAsSb alloys introduced in ultrafast heterojunction bipolar transistors on InP

Published:2009-05 Issue:5 Volume:206 Page:786-790
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi (a)

Author:

Chouaib Houssam,Bru-Chevallier Catherine,Apostoluk Aleksandra,Rudno-Rudzinski Wojciech,Pelouard Jean-Luc,Lijadi Melania,Bove Philippe

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V

2. Band gaps and band offsets in strained GaAs1−ySby on InP grown by metalorganic chemical vapor deposition

3. Midinfrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb indicating negligible bowing for the spin orbit splitting energy

4. Franz–Keldysh oscillations originating from a well‐controlled electric field in the GaAs depletion region

5. Photoreflectance study of GaAsSb∕InP heterostructures

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