High electron mobility achieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen-Reference-Cited by-同舟云学术

High electron mobility achieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen

Published:2009-10 Issue:10 Volume:206 Page:2363-2373
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi (a)

Author:

Zippelius B.,Beljakowa S.,Krieger M.,Pensl G.,Reshanov S. A.,Noborio M.,Kimoto T.,Afanas'ev V. V.

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. SiC Power MOSFETs – Status, Trends and Challenges

2. Intrinsic SiC/SiO2 Interface States

3. Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

4. High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face

5. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

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3. Nitrided Gate Oxide Formed by Rapid Thermal Processing for 4H-SiC MOSFETs;ECS Transactions;2011-04-25

4. Oxidation Process by RTP for 4H-SiC MOSFET Gate Fabrication;Materials Science Forum;2011-03

5. Near-interface Traps in n-type SiO2/SiC MOS Capacitors from Energy-resolved CCDLTS;MRS Proceedings;2010