High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering-Reference-Cited by-同舟云学术

High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering

Published:2010-08-24 Issue:1 Volume:208 Page:65-69
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Valdueza-Felip Sirona,Naranjo Fernando B.,González-Herráez Miguel,Lahourcade Lise,Monroy Eva,Fernández Susana

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Growth and depth dependence of visible luminescence in wurtzite InN epilayers

2. GaN, AlN, and InN: A review

3. Growth and applications of Group III-nitrides

4. Thermodynamic Study on Metalorganic Vapor-Phase Epitaxial Growth of Group III Nitrides

5. Growth and characterization of N-polar and In-polar InN films by RF-MBE

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1. Low current driven bidirectional violet light emitting diode based on p-GaN/n-InN heterojunction;Journal of Luminescence;2024-02

2. Sputtered growth of high mobility InN thin films on different substrates using Cu-ZnO buffer layer;Materials Science in Semiconductor Processing;2017-11

3. In-rich AlxIn1−xN grown by RF-sputtering on sapphire: from closely-packed columnar to high-surface quality compact layers;Journal of Physics D: Applied Physics;2017-01-11

4. Morphology and Optical Properties of RF Sputtering Deposited Indium Nitride Layers Under Different N2/Ar Ratio;Journal of Nanoscience and Nanotechnology;2017-01-01

5. Growth and Characterization of Single Crystalline InN Grown on GaN by RF Sputtering for Robust Schottky Contacts;Journal of Electronic Materials;2016-10-20