Growth and characterization of N-polar and In-polar InN films by RF-MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Transient electron transport in wurtzite GaN, InN, and AlN
2. Electron mobility in indium nitride
3. Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy
4. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
5. Effects of film polarities on InN growth by molecular-beam epitaxy
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1. N-polar GaN: Epitaxy, properties, and device applications;Progress in Quantum Electronics;2023-01
2. Growth of well-oriented InN nanodots by magnetron sputtering with varying sputtering temperature;Journal of Vacuum Science & Technology B;2018-07
3. Surface and bulk electronic structures of heavily Mg-doped InN epilayer by hard X-ray photoelectron spectroscopy;Journal of Applied Physics;2017-03-07
4. Morphology and arrangement of InN nanocolumns deposited by radio-frequency sputtering: Effect of the buffer layer;Journal of Crystal Growth;2016-01
5. InN nanocolumns grown by molecular beam epitaxy and their luminescence properties;Journal of Crystal Growth;2015-11
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