In-situ X-ray photoelectron spectroscopy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

In-situ X-ray photoelectron spectroscopy characterization of Si interlayer based surface passivation process for AlGaAs/GaAs quantum wire transistors

Published:2007-04 Issue:4 Volume:204 Page:1034-1040
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Akazawa Masamichi,Hasegawa Hideki,Jia Rui

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy

2. R. Jia, T. Sato, S. Kasai, and H. Hasegawa, in: Proc. of 31st International Symposium on Compound Semiconductor (ISCS-2004), Seoul, Korea, 2004, p. 304.

3. MBE growth and applications of silicon interface control layers

4. Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of (001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System

5. Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4×6) Reconstruction

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP