Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4×6) Reconstruction-Reference-Cited by-同舟云学术

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Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4×6) Reconstruction

Published:2002-04-30 Issue:Part 1, No. 4B Volume:41 Page:2542-2547
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nakano Yuuta,Negoro Noboru,Hasegawa Hideki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=4S/a=2542/pdf

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metalorganic Vapor Phase Epitaxy of GaAs with AlP Surface Passivation Layer for Improved Metal Oxide Semiconductor Characteristics;Japanese Journal of Applied Physics;2010-04-20

2. In situ anti-oxidation treatment in GaAs MOVPE by as desorption and passivation with AlP;Journal of Crystal Growth;2010-04

3. Theory of HfO2-Based High-k Dielectric Gate Stacks;Fundamentals of III-V Semiconductor MOSFETs;2010

4. Surface reconstructions on GaAs(001);Surface Science Reports;2008-07

5. In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP’s: effect of GaAs surface reconstruction;Microelectronic Engineering;2007-09

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