Damage accumulation and structural modification in a- and c-plane GaN implanted with 400-keV and 5-MeV Au+ ions-Reference-Cited by-同舟云学术

Damage accumulation and structural modification in a- and c-plane GaN implanted with 400-keV and 5-MeV Au+ ions

Author:

Macková A.¹²^ORCID,Malinskyˊ P.¹²^ORCID,Jágerová A.¹²,Sofer Z.³,Sedmidubský D.³,Klímová K.³,Böttger R.⁴,Akhmadaliev S.⁴

Affiliation:

1. Nuclear Physics Institute of the Czech Academy of Sciences, v. v. i.; Rez 250 68 Czech Republic

2. Department of Physics, Faculty of Science; J. E. Purkinje University; Ceske Mladeze 8 Usti nad Labem 400 96 Czech Republic

3. Department of Inorganic Chemistry; Institute of Chemical Technology; Prague 166 28 Czech Republic

4. Institute of Ion Beam Physics and Materials Research; Helmholtz Zentrum Dresden-Rossendorf; Dresden 01328 Germany

Funder

OP RDE, MEYS, Czech Republic

University of J. E. Purkynje

Grantová Agentura České Republiky

CANAM

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

Reference27 articles.

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