The role of oxygen vacancies in the high cycling endurance and quantum conductance in BiVO 4 ‐based resistive switching memory-Reference-Cited by-同舟云学术

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The role of oxygen vacancies in the high cycling endurance and quantum conductance in BiVO 4 ‐based resistive switching memory

Published:2020-01-17 Issue:5 Volume:2 Page:960-967
ISSN:2567-3165
Container-title:InfoMat
language:en
Short-container-title:InfoMat

Author:

Zhao Mengting¹,Yan Xiaobing²,Ren Long³,Zhao Mengliu²,Guo Fei¹,Zhuang Jincheng¹,Du Yi¹³^ORCID,Hao Weichang¹

Affiliation:

1. School of Physics and BUAA‐UOW Joint Research CentreBeihang University Beijing China

2. College of Electronic and Information EngineeringHebei University Baoding China

3. Institute for Superconducting and Electronic MaterialsUniversity of Wollongong Wollongong New South Wales Australia

Funder

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

Publisher

Wiley

Subject

General Medicine

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/inf2.12085

Reference35 articles.

1. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

2. Sub-nanosecond switching of a tantalum oxide memristor

3. Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration

4. Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

5. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

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