Investigation of carrier spill-over in InGaN-based light-emitting diodes by temperature dependences of resonant photoluminescence and open-circuit voltage-Reference-Cited by-同舟云学术

Investigation of carrier spill-over in InGaN-based light-emitting diodes by temperature dependences of resonant photoluminescence and open-circuit voltage

Published:2013-07-29 Issue:10 Volume:210 Page:2204-2208
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Han Dong-Pyo¹,Kang Min-Goo¹,Oh Chan-Hyoung¹,Kim Hyunsung¹,Kim Kyu-Sang²,Shin Dong-Soo³,Shim Jong-In¹

Affiliation:

1. Department of Electronics and Communication Engineering; Hanyang University; Ansan Gyeonggi-do 426-791 Korea

2. Department of Applied Physics and Electronics; Sangji University; Wonju Gangwon-do 220-702 Korea

3. Department of Applied Physics; Hanyang University; Ansan Gyeonggi-do 426-791 Korea

Funder

Industrial Strategic Technology Development Program

Ministry of Knowledge Economy

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201329187/fullpdf

Reference17 articles.

1. High-Power and High-Efficiency InGaN-Based Light Emitters

2. Solid-State Light Sources Getting Smart

3. Rate equation analysis of efficiency droop in InGaN light-emitting diodes

4. Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping

5. Performance of High-Power AlInGaN Light Emitting Diodes

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