A p‐GaN‐Gated Hybrid Anode Lateral Diode with a Thicker AlGaN Barrier Layer-Reference-Cited by-同舟云学术

A p‐GaN‐Gated Hybrid Anode Lateral Diode with a Thicker AlGaN Barrier Layer

Published:2020-03-08 Issue:7 Volume:217 Page:1900781
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Su Shuai¹²^ORCID,Zhong Yaozong¹²,Zhou Yu²,Gao Hongwei²,Zhan Xiaoning²,Chen Xin¹³,Guo Xiaolu¹²,Sun Qian¹²,Zhang Zihui³,Bi Wengang³,Yang Hui¹²

Affiliation:

1. School of Nano Technology and Nano BionicsUniversity of Science and Technology of China Hefei 230026 China

2. Key Laboratory of Nanodevices and ApplicationsSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences (CAS) Suzhou 215123 China

3. State Key Laboratory of Reliability and Intelligence of Electrical EquipmentHebei University of Technology Tianjin 201900 China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Jiangsu Province

Natural Science Foundation of Jiangxi Province

China Postdoctoral Science Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900781

Reference22 articles.

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4. Single-Chip Boost Converter Using Monolithically Integrated AlGaN/GaN Lateral Field-Effect Rectifier and Normally Off HEMT

5. G. F.Tang M. H.Kwan Z. F.Zhang.J. B.He J. C.Lei R. Y.Su F. W.Yao Y. M.Lin J. L.Yu T.Yang C. H.Chern T.Tsai H. C.Tua A.Kalnitsky K. J.Chen inProc. of 30th Int. Symp. on Power Semiconductor Devices and ICs IEEE Chicago IL2018 76.

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