Influence of an Insulator Layer on the Charge Transport in a Metal/Insulator/n‐AlGaN Structure-Reference-Cited by-同舟云学术

Influence of an Insulator Layer on the Charge Transport in a Metal/Insulator/n‐AlGaN Structure

Published:2019-01-29 Issue:6 Volume:216 Page:1800810
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Shao Hua¹²,Che Jiamang¹²,Kou Jianquan¹²,Chu Chunshuang¹²,Tian Kangkai¹²,Fang Mengqian¹²,Zhang Yonghui¹²,Bi Wengang¹²,Zhang Zi‐Hui¹²^ORCID

Affiliation:

1. Institute of Micro‐Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology5340 Xiping Road, Beichen DistrictTianjin 300401P. R. China

2. Key Laboratory of Electronic Materials and Devices of Tianjin5340 Xiping Road, Beichen DistrictTianjin 300401P. R. China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hebei Province

Ministry of Human Resources and Social Security

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201800810

Reference24 articles.

1. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

2. Contact mechanisms and design principles for alloyed ohmic contacts to n-GaN

3. Properties of Si donors and persistent photoconductivity in AlGaN

4. The effect of electrode heat sink in organic-electronic devices

5. Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN∕GaN high-electron-mobility transistors

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1. Enhanced performance of an AlGaN-based deep ultraviolet light-emitting diode using a p⁺-GaN/SiO₂/ITO tunnel junction;Optics Letters;2022-02-03

2. Fabrication and characterization of metal insulator semiconductor Ag/PVA/GO/PVA/n-Si/Ag device;Microelectronic Engineering;2020-09

3. Design Strategies for Mesa-Type GaN-Based Schottky Barrier Diodes for Obtaining High Breakdown Voltage and Low Leakage Current;IEEE Transactions on Electron Devices;2020-05

4. Metal-insulator-semiconductor structure for deep-ultraviolet light-emitting diodes to increase the electron injection in the cathode region;Superlattices and Microstructures;2020-04