Design and fabrication of a 1.2 kV GaN-based MOS vertical transistor for single chip normally off operation-Reference-Cited by-同舟云学术

Design and fabrication of a 1.2 kV GaN-based MOS vertical transistor for single chip normally off operation

Published:2016-06-03 Issue:10 Volume:213 Page:2714-2720
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Li Wenwen¹,Chowdhury Srabanti¹

Affiliation:

1. School of Electrical, Computer, and Energy Engineering; Arizona State University; AZ Tempe 85287 USA

Funder

Advanced Research Projects Agency-Energy SWITCHES

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices

2. Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate

3. High Drain Current Density E-Mode ${\rm Al}_{2}{\rm O}_{3}$/AlGaN/GaN MOS-HEMT on Si With Enhanced Power Device Figure-of-Merit $(4\times 10^{8}~{\rm V}^{2}\Omega^{-1}{\rm cm}^{-2})$

4. High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

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