Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure-Reference-Cited by-同舟云学术

Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

Published:2016-11-11 Issue:4 Volume:214 Page:1600441
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Ben Ammar H.¹,Minj A.¹,Gamarra P.²,Lacam C.²,Tordjman M.²,di Forte-Poisson M. A.²,Morales M.¹,Chauvat M. P.¹,Ruterana P.¹

Affiliation:

1. Centre de Recherche sur les Ions, les Matériaux et la Photonique UMR 6252; CNRS ENSICAEN UCBN CEA; 6 Boulevard du Maréchal Juin 14050 Caen Cedex France

2. III-V Lab, 1 Avenue Augustin Fresnel; Campus Polytechnique; 91767 Palaiseau France

Funder

National Research Agency (ANR)

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Optical and structural characterization of AlInN layers for optoelectronic applications

2. High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN

3. Microstructure and electronic properties of InGaN alloys

4. Nitride-based semiconductors for blue and green light-emitting devices

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