In2 O3 -Based Transparent Conducting Oxide Films with High Electron Mobility Fabricated at Low Process Temperatures-Reference-Cited by-同舟云学术

In2 O3 -Based Transparent Conducting Oxide Films with High Electron Mobility Fabricated at Low Process Temperatures

Published:2018-02-12 Issue:7 Volume:215 Page:1700506
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Koida Takashi¹^ORCID,Ueno Yuko¹,Shibata Hajime¹

Affiliation:

1. Research Center for Photovoltaics National Institute of Advanced Industrial Science and Technology; 1-1-1 Umezono Tsukuba 305-8568 Japan

Funder

National Institute of Advanced Industrial Science and Technology

New Energy and Industrial Technology Development Organization

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201700506/fullpdf

Reference69 articles.

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2. A new light trapping TCO for nc-Si:H solar cells

3. Reduction of Optical Loss in Hydrogenated Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells by High-Mobility Hydrogen-Doped In2O3Transparent Conductive Oxide

4. 24.7% Record Efficiency HIT Solar Cell on Thin Silicon Wafer

5. High mobility transparent conductive W-doped In2O3 thin films prepared at low substrate temperature and its application to solar cells

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