The Influence of n-AlGaN Inserted Layer on the Performance of Back-Illuminated AlGaN-Based p-i-n Ultraviolet Photodetectors-Reference-Cited by-同舟云学术

The Influence of n-AlGaN Inserted Layer on the Performance of Back-Illuminated AlGaN-Based p-i-n Ultraviolet Photodetectors

Published:2017-12-06 Issue:2 Volume:215 Page:1700358
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Chen Yiren¹,Zhang Zhiwei¹,Li Zhiming¹,Jiang Hong¹,Miao Guoqing¹,Song Hang¹

Affiliation:

1. State Key Laboratory of Luminescence and Applications Changchun Institute of Optics, Fine Mechanics and Physics Chinese Academy of Sciences; 3888 Dongnanhu Road Changchun 130033 China

Funder

National Natural Science Foundation of China

Jilin Provincial Science & Technology Department

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Milliwatt power AlGaN-based deep ultraviolet light emitting diodes by plasma-assisted molecular beam epitaxy

2. Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature

3. AlGaN/GaN HEMT With 300-GHz $f_{\max}$

4. Al(Ga)N/GaN high electron mobility transistors on silicon

5. Solar-blind AlGaN-based p-i-n photodetectors with high breakdown voltage and detectivity

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