GaN-Based Ultraviolet Phototransistor With Two Parallel Polarization-Doped Junctions and an Al<sub>0.20</sub>Ga<sub>0.80</sub>N Insertion Layer to Achieve Low Dark Current and High Detectivity-Reference-Cited by-同舟云学术

GaN-Based Ultraviolet Phototransistor With Two Parallel Polarization-Doped Junctions and an Al_0.20Ga_0.80N Insertion Layer to Achieve Low Dark Current and High Detectivity

Published:2023-11 Issue:11 Volume:70 Page:5707-5712
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Xuan Zhan¹,Chu Chunshuang¹,Tian Kangkai²,Zhu Zhengji¹,Xie Zhiwei³,Jiang Ke³,Zhang Yonghui¹^ORCID,Sun Xiaojuan³,Zhang Zi-Hui¹^ORCID,Li Dabing³^ORCID

Affiliation:

1. State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Tianjin, China

2. School of Integrated Circuits, Guangdong University of Technology, Guangzhou, China

3. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Science and Technology Program of Hebei

State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10294316/10251047.pdf?arnumber=10251047