Near‐Complete Elimination of Size‐Dependent Efficiency Decrease in GaN Micro‐Light‐Emitting Diodes-Reference-Cited by-同舟云学术

Near‐Complete Elimination of Size‐Dependent Efficiency Decrease in GaN Micro‐Light‐Emitting Diodes

Published:2019-10-07 Issue:22 Volume:216 Page:1900380
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Zhu Jun¹,Takahashi Tokio¹,Ohori Daisuke²,Endo Kazuhiko³,Samukawa Seiji²³⁴^ORCID,Shimizu Mitsuaki⁵⁶,Wang Xue-Lun¹⁵⁶^ORCID

Affiliation:

1. Electronics and Photonics Research InstituteNational Institute of Advanced Industrial Science and Technology (AIST) 1-1-1 Umezono Tsukuba 305-8568 Japan

2. Institute of Fluid ScienceTohoku University 2-1-1 Katahira Aoba-ku Sendai 980-8577 Japan

3. Nanoelectronoics Research InstituteNational Institute of Advanced Industrial Science and Technology (AIST) 1-1-1 Umezono Tsukuba 305-8568 Japan

4. Advanced Institute for Materials ResearchTohoku University 2-1-1 Katahira Aoba-ku Sendai 980-8577 Japan

5. GaN Advanced Device Open Innovation LaboratoryNational Institute of Advanced Industrial Science and Technology (AIST) Furo-cho, Chikusa-ku Nagoya 464-8601 Japan

6. Institute of Materials and Systems for SustainabilityNagoya University Furo-cho, Chikusa-ku Nagoya 464-8601 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900380

Reference23 articles.

1. III-nitride blue microdisplays

2. III-Nitride full-scale high-resolution microdisplays

3. Influence of size-reduction on the performances of GaN-based micro-LEDs for display application

4. Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study

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