Low Static and Dynamic On‐Resistance with High Figure of Merit in AlGaN/GaN High Electron Mobility Transistors on Chemical Vapor Deposited Diamond-Reference-Cited by-同舟云学术

Low Static and Dynamic On‐Resistance with High Figure of Merit in AlGaN/GaN High Electron Mobility Transistors on Chemical Vapor Deposited Diamond

Published:2020-02-18 Issue:7 Volume:217 Page:1900815
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Ranjan Kumud¹²^ORCID,Sandupatla Abhinay¹,Arulkumaran Subramaniam²,Ng Geok Ing¹²

Affiliation:

1. School of EEENanyang Technological University 50 Nanyang Avenue Singapore 639798 Singapore

2. Temasek Laboratories@NTUNanyang Technological University Research Techno Plaza, 50 Nanyang Drive Singapore 637553 Singapore

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900815

Reference15 articles.

1. High breakdown GaN HEMT with overlapping gate structure

2. Formation and characterization of 4-inch GaN-on-diamond substrates

3. Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications

4. Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz

5. AlGaN/GaN HEMTs on diamond substrate with over 7 W/mm output power density at 10 GHz

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advancements in energy efficient GaN power devices and power modules for electric vehicle applications: a review;International Journal of Energy Research;2021-04-04