Fringe field control of one-dimensional room temperature sub-band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires-Reference-Cited by-同舟云学术

Fringe field control of one-dimensional room temperature sub-band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires

Published:2016-10-20 Issue:2 Volume:214 Page:1600620
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kumar Akhil S.¹,Khachariya Dolar¹,Meer Mudassar¹,Ganguly Swaroop¹,Saha Dipankar¹

Affiliation:

1. Applied Quantum Mechanics Laboratory; Indian Institute of Technology Bombay; Powai, Mumbai 400076 India

Funder

Department of Science and Technology, Republic of South Africa

Indian Space Research Organization (ISRO)

Advanced Semiconductor Technology

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201600620/fullpdf

Reference25 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. Room Temperature Ultralow Threshold GaN Nanowire Polariton Laser

3. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

4. Gallium Nitride Nanowire Nanodevices

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