Strong Size Dependency on the Carrier and Photon Dynamics in InGaN/GaN Single Nanowalls Determined Using Photoluminescence and Ultrafast Transient Absorption Spectroscopy-Reference-Cited by-同舟云学术

Strong Size Dependency on the Carrier and Photon Dynamics in InGaN/GaN Single Nanowalls Determined Using Photoluminescence and Ultrafast Transient Absorption Spectroscopy

Published:2017-07-26 Issue:8 Volume:17 Page:4596-4603
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Chouksey S.¹,Sankaranarayanan S.¹,Pendem V.¹,Saha P. K.¹,Ganguly S.¹,Saha D.¹^ORCID

Affiliation:

1. Applied Quantum Mechanics Laboratory, Indian Institute of Technology Bombay, Powai, Mumbai, 400076, India

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b00970

Reference39 articles.

1. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

2. Diffusion Injection in a Buried Multiquantum Well Light-Emitting Diode Structure

3. Tuning carrier lifetime in InGaN/GaN LEDs via strain compensation for high-speed visible light communication

4. Superluminescent light emitting diodes on naturally survived InGaN/GaN lateral nanowires

5. Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors

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