Transmission electron microscopy based interface analysis of the origin of the variation in surface recombination of silicon for different surface preparation methods and passivation materials-Reference-Cited by-同舟云学术

Transmission electron microscopy based interface analysis of the origin of the variation in surface recombination of silicon for different surface preparation methods and passivation materials

Published:2017-06-19 Issue:10 Volume:214 Page:1700286
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Ali Haider¹²³,Moldovan Anamaria⁴,Mack Sebastian⁴,Schoenfeld Winston V.¹²³⁵,Davis Kristopher O.²³

Affiliation:

1. Department of Materials Science and EngineeringUniversity of Central FloridaOrlando FLUSA

2. Florida Solar Energy CenterUniversity of Central FloridaCocoaFLUSA

3. c‐Si DivisionU.S. Photovoltaic Manufacturing ConsortiumOrlandoFLUSA

4. Fraunhofer‐Institute for Solar Energy Systems ISEFreiburgGermany

5. CREOL, the College of Optics & PhotonicsUniversity of Central FloridaOrlandoFLUSA

Funder

U.S. Department of Energy

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201700286

Reference15 articles.

1. Surface passivation of crystalline silicon solar cells: a review

2. Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

3. Efficiency Improvement of Silicon Solar Cells by Nitric Acid Oxidization

4. Interface engineering for the passivation of c-Si with O3-based atomic layer deposited AlOx for solar cell application

5. Nitric acid oxidation of Si method for improvement of crystalline Si solar cell characteristics by surface passivation effect

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