Development of Highly Uniform and Reproducible DI-O<sub>3</sub> layers for Photovoltaic Applications and Beyond-Reference-Cited by-同舟云学术

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Development of Highly Uniform and Reproducible DI-O₃ layers for Photovoltaic Applications and Beyond

Published:2022-06-05 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)
language:
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Author:

Gao Munan¹,Kumar Vibhor¹,Zin Ngwe¹

Affiliation:

1. Rutgers, the State University of New Jersey,New Brunswick

Funder

U.S. Department of Energy's

Office of Energy Efficiency and Renewable Energy (EERE)

Solar Energy Technologies Office

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9938432/9938453/09938655.pdf?arnumber=9938655

Reference17 articles.

1. Evidence of a high density of fixed negative charges in an insulation layer compound on silicon

2. High-Efficiency c-Si Solar Cells Passivated With ALD and PECVD Aluminum Oxide

3. Improving Silicon Surface Passivation with a Silicon Oxide Layer Grown via Ozonated Deionized Water

4. Tunnel oxide passivated carrier-selective contacts based on ultra-thin SiO2 layers grown by photo-oxidation or wet-chemical oxidation in ozonized water

5. Carrier transport through the ultrathin silicon-oxide layer in tunnel oxide passivated contact (TOPCon) c-Si solar cells

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