Spatial Atomic Layer Deposition of Aluminum Oxide as a Passivating Hole Contact for Silicon Solar Cells-Reference-Cited by-同舟云学术

Spatial Atomic Layer Deposition of Aluminum Oxide as a Passivating Hole Contact for Silicon Solar Cells

Published:2020-08-02 Issue:18 Volume:217 Page:2000348
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Öğütman Kortan¹²³^ORCID,Iqbal Nafis⁴⁵^ORCID,Gregory Geoffrey⁴⁵^ORCID,Li Mengjie⁴⁵,Haslinger Michael⁶,Cornagliotti Emanuele⁷,Schoenfeld Winston V.¹²³⁴⁵^ORCID,John Joachim⁸,Davis Kristopher O.²³⁴⁵^ORCID

Affiliation:

1. Department of Electrical Engineering and Computer Science University of Central Florida Orlando FL 32826 USA

2. CREOL The College of Optics and Photonics University of Central Florida Orlando FL 32816 USA

3. Florida Solar Energy Center University of Central Florida Cocoa FL 32922 USA

4. Department of Materials Science and Engineering University of Central Florida Orlando FL 32816 USA

5. Resilient Intelligent Sustainable Energy Systems Faculty Cluster University of Central Florida Orlando FL 32816 USA

6. Thales Alenia Space Rue Chapelle Beaussart 94-100 Charleroi 6030 Belgium

7. Kaneka Belgium NV Lenneke Marelaan 4 Zaventem 1932 Belgium

8. IMEC (partner in EnergyVille) Kapeldreef 75 Leuven 3001 Belgium

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202000348

Reference44 articles.

1. A Roadmap for PERC Cell Efficiency towards 22%, Focused on Technology-related Constraints

2. Contact Selectivity and Efficiency in Crystalline Silicon Photovoltaics

3. Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects

4. Passivating contacts for crystalline silicon solar cells

5. Passivation, conductivity, and selectivity in solar cell contacts: Concepts and simulations based on a unified partial-resistances framework

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