Spatially‐Modulated Silicon Interface Energetics Via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Ultrathin Alumina-Reference-Cited by-同舟云学术

Spatially‐Modulated Silicon Interface Energetics Via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Ultrathin Alumina

Published:2022-12-16 Issue:6 Volume:10 Page:2202166
ISSN:2196-7350
Container-title:Advanced Materials Interfaces
language:en
Short-container-title:Adv Materials Inter

Author:

Henning Alex¹^ORCID,Bartl Johannes D.¹²³^ORCID,Wolz Lukas¹,Christis Maximilian¹,Rauh Felix¹,Bissolo Michele¹,Grünleitner Theresa¹^ORCID,Eichhorn Johanna¹^ORCID,Zeller Patrick⁴⁵⁶,Amati Matteo⁴^ORCID,Gregoratti Luca⁴,Finley Jonathan J.¹,Rieger Bernhard²^ORCID,Stutzmann Martin¹^ORCID,Sharp Ian D.¹^ORCID

Affiliation:

1. Walter Schottky Institute and Physics Department Technical University of Munich 85748 Garching Germany

2. Department of Chemistry WACKER‐Chair for Macromolecular Chemistry Technische Universität München Lichtenbergstraße 4 85747 Garching bei München Germany

3. Department of Chemistry and Bar‐Ilan Institute for Nanotechnology & Advanced Materials Bar‐Ilan University Anna and Max Webb Street Ramat Gan 5290002 Israel

4. Elettra‐Sincrotrone Trieste SCpA SS14‐Km163.5 in Area Science Park Trieste 34149 Italy

5. Helmholtz‐Zentrum Berlin für Materialien and Energie GmbH BESSY II, Albert‐Einstein‐Straβe 15 12489 Berlin Germany

6. Fritz‐Haber‐Institut der Max‐Planck‐Gesellschaft Dept. Inorganic Chemistry Faradayweg 4–6 14195 Berlin Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/admi.202202166

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2. Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3

3. Chemical and structural study of electrically passivating Al2O3/Si interfaces prepared by atomic layer deposition

4. Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts

5. High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination

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