Process–Structure–Properties Relationships of Passivating, Electron‐Selective Contacts Formed by Atmospheric Pressure Chemical Vapor Deposition of Phosphorus‐Doped Polysilicon-Reference-Cited by-同舟云学术

Process–Structure–Properties Relationships of Passivating, Electron‐Selective Contacts Formed by Atmospheric Pressure Chemical Vapor Deposition of Phosphorus‐Doped Polysilicon

Published:2022-02-11 Issue:5 Volume:16 Page:2100639
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Physica Rapid Research Ltrs

Author:

Mousumi Jannatul Ferdous¹²^ORCID,Gregory Geoffrey¹²,Ganesan Jeya Prakash¹,Nunez Christian³,Provancha Kenneth³,Seren Sven⁴,Zunft Heiko⁴,Jurca Titel⁵,Banerjee Parag¹,Kar Aravinda⁶,Kumar Ranganathan⁷,Davis Kristopher O.¹²⁶⁸^ORCID

Affiliation:

1. Department of Materials Science and Engineering University of Central Florida Orlando FL 32816 USA

2. Resilient Intelligent Sustainable Energy Systems Faculty Cluster University of Central Florida Orlando FL 32816 USA

3. Schmid Thermal Systems Inc. Watsonville CA USA

4. Schmid Group R&D 72250 Freundenstadt Germany

5. Department of Chemistry University of Central Florida Orlando FL 32816 USA

6. CREOL The College of Optics and Photonics University of Central Florida Orlando FL 32816 USA

7. Department of Mechanical and Aerospace Engineering University of Central Florida Orlando FL 32816 USA

8. FSEC Energy Research Center Cocoa FL 32922 USA

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202100639

Reference54 articles.

1. Passivating contacts for crystalline silicon solar cells

2. Surface passivation of crystalline silicon solar cells: Present and future

3. High-Performance TiO2-Based Electron-Selective Contacts for Crystalline Silicon Solar Cells

4. Spatial Atomic Layer Deposition of Aluminum Oxide as a Passivating Hole Contact for Silicon Solar Cells

5. Improving the Passivation of Molybdenum Oxide Hole‐Selective Contacts with 1 nm Hydrogenated Aluminum Oxide Films for Silicon Solar Cells

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