GaN/Al0.1 Ga0.9 N-based visible-blind double heterojunction phototransistor with a collector-up structure-Reference-Cited by-同舟云学术

GaN/Al0.1 Ga0.9 N-based visible-blind double heterojunction phototransistor with a collector-up structure

Published:2017-05-26 Issue:8 Volume:214 Page:1600821
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Zhang Lingxia¹,Tang Shaoji¹,Wu Hualong¹,Wang Hailong¹,Wu Zhisheng²,Jiang Hao³

Affiliation:

1. School of Physics and Engineering; Sun Yat-sen University; Guangzhou 510275 P. R. China

2. State Key Laboratory of Optoelectronic Materials and Technologies; Sun Yat-sen University; Guangzhou 510275 P. R. China

3. School of Microelectronics; Sun Yat-sen University; Guangzhou 510275 P. R. China

Funder

National Key R&D Program of China

National Natural Science Foundation of China

Natural Science Foundation of Guangdong Province

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

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3. AlGaN solar-blind avalanche photodiodes with high multiplication gain

4. Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes

5. AlxGa1−xN Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than $10^{5}$

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